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Characterization Of Wide Bandgap Power Semiconductor Devices
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Characterization Of Wide Bandgap Power Semiconductor Devices
By None
Current price: $208.00

Coles
Characterization Of Wide Bandgap Power Semiconductor Devices
By None
Current price: $208.00
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Size: Hardcover
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At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.Characterization of Wide Bandgap Power Semiconductor Devices
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.Characterization of Wide Bandgap Power Semiconductor Devices



















